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Solid-state memories based on ferroelectric tunnel junctions

We report non-volatile memories with OFF/ON ratios as high as 100 and write powers as low as 104 A/cm2 at room temperature by storing data in the electric polarization direction of a ferroelectric tunnel barrier. The junctions show large, stable, reproducible and reliable tunnel electroresistance, with resistance switching occurring at the coercive voltage of ferroelectric switching. These ferroelectric devices emerge as an alternative to other resistive memories, and have the advantage of not being based on voltage-induced migration of matter at the nanoscale, but on a purely electronic mechanism.
A. Chanthbouala, A. Crassous et al., Nature Nanotechnology (2011)