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Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities

In the past few years, there have been a number of proposals for fabricating magnetic memories based on the current-induced motion of magnetic domain walls. A device that uses a novel geometry for injecting electrical currents into the sample is shown to work with current densities that are two orders of magnitude lower than in previous approaches.
A. Chanthbouala et al., Nature Physics (2011)